Semiconductor equipment giant ASML and chipmaker TSMC are pushing the semiconductor industry toward 12-inch photomasks, a larger format that could make High-NA EUV lithography more productive and cost-effective for advanced chip manufacturing.The companies announced an industry-wide initiative on September 7 to develop the infrastructure needed for the transition. The effort targets a 12-inch mask pilot line by 2031, with 12-inch High-NA lithography systems expected to enter advanced-node production by 2033.High-NA EUV lithography is expected to play a growing role as chipmakers move to smaller and more complex process nodes.
TSMC plans to use ASML’s High-NA technology in high-volume manufacturing for advanced nodes starting in 2030.The immediate challenge is that High-NA EUV will initially continue using today’s 6-inch photomasks. Moving to a 12-inch format would allow manufacturers to get more productivity from the lithography process while reducing constraints associated with producing increasingly complex chip patterns.Bigger masks, higher productivityA larger photomask can help make better use of each lithography exposure, while also addressing stitching constraints that become more important as chip designs grow more complex.
ASML and TSMC say the transition could ultimately help lower chipmaking costs and improve fab productivity.“We expect the adoption of High NA EUV to increase progressively along the device scaling roadmap, first using current 6-inch masks and then further supported by 12-inch masks, which enable greater scanner productivity and allow the industry to meet the demand for smaller, faster and more energy-efficient chips.” said Christophe Fouquet, president & CEO, ASML.The move is not simply a matter of making a larger mask.
It requires changes across the semiconductor supply chain,
It requires changes across the semiconductor supply chain, including mask manufacturing, inspection and other supporting technologies. That is why ASML and TSMC are positioning the effort as an industry-wide initiative rather than a development limited to the two companies.Major ecosystem partners and suppliers have already expressed interest in participating.For TSMC, the transition is tied directly to the increasing complexity of advanced chips.
As process nodes progress, the company expects more layers to require High-NA EUV, particularly as transistor architectures become more complicated.Industry prepares for 12 inches“We have always believed that when the industry works together to solve complex problems, we unlock possibilities that no single company could achieve alone,” said TSMC Chairman and CEO Dr. C.C. Wei.
“By bringing together expertise from across the industry’s value chain, we hope to keep providing the benefits of cutting-edge technology through continuous innovation that lowers barriers and puts advanced solutions accessible at scale.”The proposed timeline gives the industry several years to develop and qualify the new mask ecosystem. A pilot line is targeted for 2031, followed by the planned introduction of 12-inch High-NA lithography systems into advanced-node production in 2033.The shift could become increasingly important as chipmakers seek to produce more powerful and energy-efficient processors while controlling the rising cost and complexity of leading-edge manufacturing.
